Implementation of flash analog-to-digital converters in by Erik Sall.

By Erik Sall.

Show description

Read Online or Download Implementation of flash analog-to-digital converters in silicon-on-insulator CMOS technology PDF

Similar technique books

U-X-L encyclopedia of water science - Science

Encyclopedia of Water technological know-how explores water technology andissues from a global point of view. subject matters lined includelakes and streams, oceans, aquatic animals, climate and weather, glaciers, wetlands, ecology, hydropower, advertisement fishing, acid rain, game, pollutants, economics, water conservation, overseas water legislation, worldwide warming and lots more and plenty extra.

Manual for determining the remaining strength of corroded pipelines : supplement to ASME B31 code for pressure piping

Guide for identifying the rest energy of Corroded Pipelines/ B31G-2009: complement to Asme B31 Code strain Piping

Generating power at high efficiency: Combined cycle technology for sustainable energy production

Drawn from a wealth of expertise and examples from around the globe, this booklet stories key advancements in mixed cycle know-how that support to make sure sustainable power creation. It lines the early improvement of the mixed cycle in Europe and North the US to accomplish greater potency of energy new release.

Extra info for Implementation of flash analog-to-digital converters in silicon-on-insulator CMOS technology

Sample text


A comparator. 2(a). 5. 5, and zero otherwise. 2(b). 5 to one. , a sinusoid is applied to the comparator input the output will contain several tones, since the transfer function is nonlinear. 3(a), where you clearly see the tones generated by the nonlinearities of the comparator. Hence to say that the output resembles uniformly distributed noise is not a good approximation in the case of a 1-bit ADC. When increasing the resolution of the ADC the tones in the output will spread over the whole spectrum, as would be the case for a uniformly distributed quantization error.

Device cannot be charged, and several of the unwanted effects appearing in the partially depleted devices are thereby avoided. However, other obstacles exist of which the difficulty of manufacturing is the most important [64]. Since the active thin-film silicon layer must be very thin, its statistical variation of relative thickness over the chip is large. Further, the threshold voltage of the device depends on the thin-film thickness. Consequently, the thin-film thickness variation results in varying threshold voltages over the chip [20].

Download PDF sample

Rated 4.47 of 5 – based on 30 votes